schottky barrier diode lrb520s - maximum ratings (t a = 25 c) parameter symbol limits unit dc reverse voltage v r 40 v average rectified forward current i o 200 ma peak forward surge current i fsm 1a junction temperature t j 125 c storage temperature t stg -40~+125 c electrical characteristics( t a = 25 c ) parameter symbol min. max. unit conditions forward voltage v f 0.39 v i f =10ma reverse current i r - 1 ? v r =10v z applictions low current rectification and high speed switching z features extremelysmall surface mounting type. (sod523) low i r . z construction silicon epitaxial planar 1 2 cathode anode sod-523 1 2 leshan radio company, ltd. z device marking shipping lrb520s-40t1g d 3000/tape&reel lrb520s-40t3g d 10000/tape&reel we declare that the material of product compliance with rohs requirements. 40t1g ordering information forward voltage v f 0.55 v i f =100ma - - reverse current i r - 10 ? v r =40v high reliability reverse voltage(repetitive peak) v r 40 v rev.o 1/4
10 100 1000 10000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma if=200ma 300us time mounted on epoxy board 0 100 200 300 400 500 600 700 800 900 1000 1 10 100 0 102030 forward voltagevf(mv) vf-if characteristics forward current:if(ma) 0 0.1 0.2 0.3 0 0.1 0.2 0.3 0.4 0.5 reverse current:ir(a) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map 0 5 10 15 20 25 30 35 40 45 50 ave:23.2pf ta=25 f=1mhz vr=0v n=10pcs ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics 0 5 10 15 20 25 30 ave:5.60a 8.3ms ifsm 1cyc 0 5 10 1 10 100 8.3ms ifsm 1cyc 8.3ms 0.001 0.01 0.1 1 10 100 1000 0 100 200 300 400 500 600 time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics f=1mh ta=25 vr=10v n=30pcs ave:67.0na 0 0.002 0.004 0.006 0.008 0.01 0 10203040 dc d=1/2 sin(?180) 0 5 10 15 0.1 1 10 100 t ifsm ta=125 ta=-25 ta=25 ta=75 dc d=1/2 sin(?180) 460 470 480 490 500 510 ave:491.2mv ta=25 if=100ma n=30pcs 0.0001 0.001 0.01 0.1 1 10 100 1000 0 10203040 ta=125 ta=75 ta=25 ta=-25 leshan radio company, ltd. lrb520s-40t1g z electrical ch aracteristic cu rv es rev.o 2/4
leshan radio company, ltd. lrb520s-40t1g ambient temperature:ta() derating curve (io-ta) average rectifide forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve (io-tc) 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 sin(?180) dc d=1/2 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=20v 0a 0v t tj=125 d=t/t t vr io vr=20v 0a 0v rev.o 3/4
sod - 523 leshan radio company, ltd. lrb520s-40t1g notes: 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. base material. trusions, or gate burrs. dim min nom max millimeters d 1.10 1.20 1.30 e 0.70 0.80 0.90 a 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 l 0.30 ref h 1.50 1.60 1.70 e l2 0.15 0.20 0.25 e d ? x ? ? y ? b 2x m 0.08 x y a h c 12 e top view side view soldering footprint* recommended 2x 0.48 0.40 2x 1.80 package outline rev.o 4/4
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